Study on force-thermal behavior and subsurface damage for nano-grinding of single crystal silicon

doi:10.16731/j.cnki.1671-3133.2024.05.011

Abstract

Abstract: Nano-grinding has been gradually applied to wafer thinning as one of the techniques to achieve low-damage processing of single crystal silicon,but the force-thermal behavior and its effect mechanism on subsurface damage formation are still unclear in the grinding process.Therefore,the connection between force-thermal behavior and subsurface damage during nano-grinding of single crystal silicon was investigated by molecular dynamics simulations. The results showed that the tangential grinding force plays a major role in material removal during nano-grinding of single crystal silicon,and the phenomenon on heat accumulation and stress concentration is obvious in the area below the front of the grit.Amorphization and phase transition are the main mechanisms of subsurface damage formation during nano-grinding of single crystal silicon under force-thermal loading.The increase in grinding force leads to a larger subsurface damage layer during removal,while a certain high temperature inhibits the formation of subsurface damage layer by enhancing the toughness of single crystal silicon.

Key words: single crystal silicon, nano-grinding, molecular dynamics, force-thermal behavior, subsurface damage

CLC Number:

TH161
TG58

WU Zhenzhen, QIAO Shujie, HAN Tao, WANG Haochang, ZHANG Piaopiao, YAN Haipeng. Study on force-thermal behavior and subsurface damage for nano-grinding of single crystal silicon[J]. Modern Manufacturing Engineering, 2024, 524(5): 80-85.

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